Vishnuram Abhinav

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This work explores the new ESD (electrostatic discharge) protection design methodology for high speed off-chip communication ICs (Integrated Circuits). We propose novel methodology which describes the optimized design prediction of ESD protection device under HBM (Human Body Model) stress condition. Furthermore, we have discussed the ESD-I/O circuit(More)
This paper presents novel capacitor less dynamic random access memory (DRAM) cells through band-gap engineered silicon-germanium (SiGe) junction less double gate field effect transistor (JL-DGFET) using two-dimensional commercial TCAD device simulator. The design window of capacitor less DRAM cell and its operations have been described. We observe(More)
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