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Journals and Conferences
Recent upgrades and applications of UFDG, a process/ physics-based compact model for nonclassical MOSFETs having ultra-thin silicon bodies (UTBs), are overviewed. The overviews are focused on use of UFDG to aid the optimal design of nanoscale double-gate (DG) CMOS.
We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same… (More)
We present a tunable flipflop-based frequency divider and a fully differential push-push VCO designed in a 200GHz f<inf>T</inf> SiGe BiCMOS technology. A new technique for tuning the sensitivity of the divider in the frequency range of interest is presented. The chip works from 60GHz up to 113GHz. The VCO is based on a new topology which allows generating… (More)
We demonstrate, using a foundry-based 65nm bulk technology, mmWave CMOS VCOs in the range of 38GHz and 77GHz with highest reported continuous tuning range (14%–25%), competitive phase noise (−88dBc/Hz at 1MHz offset at 77GHz), and high P<inf>out</inf> (6dBm at 77GHz) needed to readily integrate with CMOS PA and to tolerate PVT variations. The… (More)
A high power and wide tuning range CMOS-only transmitter (TX), composed of a VCO and a power amplifier, operating from −40°C to 125°C for 76–81GHz automotive radar is presented, and for the first time, demonstrates the feasibility of CMOS technology for automotive radar across the full automotive operating temperature range.… (More)
Continued advancements in Si-based technologies - in particular SiGe BiCMOS technologies - have enabled mmWave integrated circuits designed for 77GHz automotive radar systems to reach production-level maturity. This paper will discuss the technology requirements for mmWave automotive radar products, and also present the evolution of the respective key… (More)
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated.
3 To my parents 4 ACKNOWLEDGEMENTS This thesis is a collection of my five "memory" years at Gainesville. It is not only my research work, but also advice, encouragement, guidance and unrelenting support from Professor Jerry G. Fossum who served as my advisor during the past five "memory" years. I have my most sincere gratitude to him. His insights,… (More)
We propose the concept of AC-coupled LC tank for minimizing VCO pushing, as well as to enable multi-terminal tuning of the varactors, in the widely used cross-coupled CMOS VCOs. The proposed concept is demonstrated with a mmWave VCO (40GHz) in a foundry-based 65nm bulk CMOS. Measured data demonstrates >;3× lower pushing while achieving 16% wider… (More)