Viranjay M. Srivastava

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In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the(More)
For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a(More)
A procedure to characterize oxide thickness and conductor layers that are grown or deposited on semiconductor is by studying the characteristics of a MOS capacitor that is formed of the conductor-insulator-semiconductor layers. For a capacitor formed with oxide thickness of 510 Å (measured optically), here in this research author measures the oxide(More)
In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF(More)
—A procedure to characterize oxide and conductor layers that are grown or deposited on semiconductor can be done by studying the characteristics of a MOS capacitor that is formed of the Conductor (metal)–Insulator-Semiconductor layer. For a capacitor formed of Metal-Silicon dioxide-Silicon layers with an oxide thickness of 628Å (measured optically), some of(More)
We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified(More)
Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 5.0 V and a large resistance at the receivers and antennas (ANTs) to detect the signal. A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage. Hence it is not(More)
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The results for the development of this proposed(More)