Viranjay M. Srivastava

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For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a(More)
A procedure to characterize oxide thickness and conductor layers that are grown or deposited on semiconductor is by studying the characteristics of a MOS capacitor that is formed of the conductor-insulator-semiconductor layers. For a capacitor formed with oxide thickness of 510 Å (measured optically), here in this research author measures the oxide(More)
In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF(More)
In this paper, we have discussed the attenuation with ON resistance, isolation and switching speed of a Double-Pole Four-Throw (DP4T) RF CMOS switch, with properties of symmetric double-gate (DG) MOSFET to make obvious the advantages for DG circuits and reduce the number of transistors which increases the circuit density per unit area in addition to(More)
—A procedure to characterize oxide and conductor layers that are grown or deposited on semiconductor can be done by studying the characteristics of a MOS capacitor that is formed of the Conductor (metal)–Insulator-Semiconductor layer. For a capacitor formed of Metal-Silicon dioxide-Silicon layers with an oxide thickness of 628Å (measured optically), some of(More)
To avoid the uses of multiple RF chain associated with the multiple antennas, RF switch is most essential component. Multiple antennas systems are used to replace traditional single antennas circuitry in the radio transceiver system in order to improve the transmission capability and reliability. The desired switching system must have low cost and simple(More)
Circuits with transistors using independently controlled gates have been designed to reduce the number of transistors and to increase the logic density per area. This paper proposed a full adder and substractor circuit with novel Vertical Slit Field Effect Transistor and unique independent double gate properties to demonstrate the possible advantages for(More)