Viranjay M. Srivastava

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In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the(More)
In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF(More)
Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 5.0 V and a large resistance at the receivers and antennas (ANTs) to detect the signal. A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage. Hence it is not(More)
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The results for the development of this proposed(More)
To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F)(More)