Vinod Ramadurai

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This paper presents a novel 8 transistor SRAM cell that can be used for enhancing cell Vdd<sub>min</sub> at and beyond 90 nm technology nodes. This cell provides a way to eliminate the column select read disturb scenario in SRAMs which is one of the impediments to lowering cell voltage. Read disturbs to the selected cell are then minimized by relying on a(More)
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