Vincent Keng Sian Ong

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low-power successive approximation ADC using an offset-biased auto-zero comparator. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the(More)
Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been widely used for semiconductor devices and materials characterizations. The charge collection probability within a collecting junction plays an important role in determining the EBIC current. The conventional approach starts by solving the continuity equation to obtain(More)
The charge collection probability is the basis in the study of induced current generated when the semiconductor sample is subjected to some external excitation. In this paper, we present an analytical expression for the charge collection probability of the normal-collector configuration, with finite dimensions and surface recombination at the free surfaces.(More)
The electron-beam-induced current (EBIC) mode of the scanning electron microscope (SEM) has been widely used in semiconductor materials and devices characterization in particular the extraction of minority carrier properties. The conventional approaches require the sample to have a built-in electric field created by the charge collecting junction that(More)
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