Viktor Sverdlov

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A model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon is developed. Analytical expressions for the effective mass change induced by shear strain and valley shifts/splittings are derived using a degenerate k · p theory at the zone-boundary X point. Good agreement to(More)
Double-gate transistors are considered as an attractive option to improve the performance of logic devices and overcome some of the difficulties encountered in further downscaling of bulk MOS field-effect transistors into the decananometer regime [1]. When the channel length is reduced below approximately 25nm, quantum effects such as direct source-to-drain(More)
A stochastic model of the resistive switching mechanism in bipolar metal-oxide-based resistive random access memory RRAM is presented. The distribution of electron occupation probabilities obtained is in good agreement with previous work. In particular, it is shown that a low occupation region is formed near the cathode. Our simulations of the temperature(More)
Spintronics attracts much attention because of the potential to build novel spin-based devices which are superior to nowadays charge-based microelectronic devices. Silicon, the main element of microelectronics, is promising for spin-driven applications. We investigate the surface roughness and electron-phonon limited spin relaxation in silicon films taking(More)
In this paper a bottom-up approach for modeling field-effect biosensors (BioFETs) is developed. Starting from the given positions of charged atoms, of a given molecule, the charge and the dipole moment of a single molecule are calculated. This charge and dipole moment are used to calculate the mean surface density and mean dipole moment at the(More)
Because of the easy integration with CMOS, nonvolatility, reconfiguration capability, and fast-switching speed of magnetic tunnel junctions (MTJs), this work proposes and investigates stateful IMP-based logic gates and circuit architecture for future reconfigurable and nonvolatile computing systems. Stateful logic uses the memory unit (MTJ device) as the(More)
Low field mobility in doubleand single-gate structures is analyzed for (100) and (110) SOI substrate orientation. A Monte Carlo algorithm for vanishing driving fields allows the calculation of the mobility for arbitrary scattering rates and band structure without further approximations. Due to volume inversion, mobility in double-gate ultra-thin body (110)(More)
The experimental data of a suspend gate field-effect transistor (SGFET) have been analyzed with three different models. A SGFET is a MOSFET with an elevated gate and an empty space below it. The exposed gate-oxide layer is biofunctionalized with single stranded DNA, which is able to hybridize with a complementary strand. Due to the intrinsic charge of the(More)
The low field mobility in doubleand single-gate structures is analyzed for (100) and (110) SOI substrate orientation. Due to volume inversion, mobility in double-gate ultrathin body (110) SOI FETs is enhanced in comparison with the mobility of single-gate structures in the whole effective field range. In double-gate (100) structures the mobility decreases(More)
A modeling approach to study advanced floating body Z-RAM memory cells is developed. In particular, the scalability of the cells is investigated. First, a Z-RAM cell based on a 50nm gate length double-gate structure corresponding to state of the art technology is studied. A bi-stable behavior essential for Z-RAM operation is observed even in fully depleted(More)