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Journals and Conferences
New contribution to the methodology for simulation of Deep SubMicron (DSM), nanometerscale Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) features is proposed. The discussed approach is based on the use of traditional “compact” submicron device model. Parameters of these models are verified by means of fitting procedure to results obtained by… (More)
Methodology and results of statistical analysis and optimization in the joined process/device/circuit/system microelectronics design are presented. A simple example of the cell inverter design illustrates the efficiency of the methodology.
The hardware-software platform for design, simulation and learning via Internet network was realized with use the modern facilities Internet technologies (the server Apache, programming languages PERL/PHP).