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Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance R<sub>E</sub>, while for HBTs with a high R<sub>E</sub>, the current is distributed(More)
  • A O Univ, Ing Dipl, +8 authors Konrad Heger
  • 2005
Electrostatic discharge (ESD) is a serious risk in modern microelectronic devices. With the continuously downsizing of internal structures, the sensitivity to ESD increases. Thus ESD protection is nowadays more essential for reliable function of integrated circuits (ICs) and electronic systems, than before. The two-dimensional Transient Interferometric(More)
A 2D backside transient interferometric mapping (TIM) method for nanosecond thermal energy imaging at multiple time instants during a single stress event is introduced. The method is based on fringe interferometry and the interferograms are analyzed using the Fast Fourier Transform technique. The method is applied to investigate moving current filaments in(More)
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