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—For the first time, we report the combined application of a SiGe source and a delta-doped + region in a PD SOI MOSFET to minimize the impact of floating body effect on both the drain breakdown voltage and the single transistor latch. Our results demonstrate that the proposed SOI structure exhibits as large as 200% improvement in the breakdown voltage and(More)
We present a simple and precise protocol for standard quantum teleportation of N-qubit state, considering the most general resource q-channel and Bell states. We find condition on these states for perfect teleportation and give explicitly the unitary transformation required to be done by Bob for achieving perfect teleportation. We discuss connection of our(More)
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