We present a stochastic approach for solving the quantum-kinetic equation introduced in Part I. A Monte Carlo method based on backward time evolution of the numerical trajectories is developed. The computational complexity and the stochastic error are investigated numerically. Variance reduction techniques are applied, which demonstrate a clear advantage… (More)
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SUMMARY This work addresses the enormous efficiency and linear-ity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D… (More)
A non-parabolic piezoelectric model of electron-phonon interaction in Gallium Nitride is discussed. The Monte Carlo aspects of the model, needed for the simulation tools which provide the characteristics of GaN-based devices are analyzed in details. The piezo-scattering rate is derived by using quantum-mechanical considerations. The angular dependence is… (More)
A Wigner equation for nanometer and femtosecond transport regime has been previously derived from a three equations set model based on the generalized Wigner function. The full version of the equation poses serious numerical challenges. Two simplified versions of the equation, the Wigner-Boltzmann equation and in the homogeneous case the Levinson equation… (More)
We present a review of industrial heterostructure devices based on SiGe/Si and III–V compound semiconductors analyzed by means of numerical simulation. A comparison of device simulators and current transport models is given and critical modeling issues are addressed. Results from two-dimensional hydrodynamic analyses of heterojunction bipolar transistors… (More)