Vassil Palankovski

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For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new(More)
– Quantum mechanical analysis of the quantum confinement of ultrashort CMOS is numerically very expensive. In this paper we present a macroscopic model, which includes a new approach to match the vertical carrier profile and combines it with a classical model in lateral direction. The simulation results show a significant improvement concerning the accuracy(More)
An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical geometrical variables controlling the field distribution in the channel are determined and optimized for improved device reliability using two-dimensional numerical simulations. The results are implemented in the design of devices fabricated with 600 nm down to(More)
—We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization and, finally, transient mixed-mode de-vice/circuit simulation. The proposed methodology was tested on(More)
We present a stochastic approach for solving the quantum-kinetic equation introduced in Part I. A Monte Carlo method based on backward time evolution of the numerical trajectories is developed. The computational complexity and the stochastic error are investigated numerically. Variance reduction techniques are applied, which demonstrate a clear advantage(More)
We experimentally prove the viability of the concept of the double-heterostructure quantum well InAlN/GaN high-electron-mobility transistor (HEMT) for the device higher robustness and reliability. In the single quantum well InAlN/GaN HEMTs, the intrinsic channel resistance increases by 300% after 1 h off-state stress; much less degradation is observed in(More)
– We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between l g = 140 nm and l g = 300 nm is carried out.(More)
An overview of heterostructure RF device simulation for industrial applications based on III-V compound semiconductors has been given in (V. Palankovski et al., GaAs IC Symp. Tech. Dig., p.117-120, 2000). Here, we present the most recent achievements in numerical simulation for industrial heterostructure devices, together with relevant industrial(More)