Vassil Palankovski

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For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new(More)
Precise modeling of the saturation velocity is a key element for device simulation, especially for advanced devices such as e.g. High Electron Mobility Transistors (HEMTs) where the saturation velocity vsat is directly related to the available gain of the device. We present a model implementing the temperature dependence of the saturation velocity vsat into(More)
Wide bandgap, high saturation velocity, and high thermal stability are some of the properties of GaN, which make it an excellent material for high-power, high frequency, and high temperature applications. Given the predicted wide-spread use, reliable models are needed for simulationbased optimization. As several application areas require the devices to(More)
– Quantum mechanical analysis of the quantum confinement of ultrashort CMOS is numerically very expensive. In this paper we present a macroscopic model, which includes a new approach to match the vertical carrier profile and combines it with a classical model in lateral direction. The simulation results show a significant improvement concerning the accuracy(More)
Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of selfheating, impact ionization, SiN(More)
Strained-Si material has emerged as a strong contender for developing transistors for next-generation electronics, because this material system offers superior transport properties. We suggest a model describing the low-field bulk mobility tensor for electrons in strained-Si layers as a function of strain. Our analytical model includes the effect of(More)
M. Nedjalkov,1 D. Vasileska,2 D. K. Ferry,2 C. Jacoboni,3 C. Ringhofer,4 I. Dimov,5 and V. Palankovski1 1AMADEA Group, IμE, TU-Vienna, Gusshausstrasse 27-29/E360 A-1040 Vienna, Austria 2Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-1804, USA 3University of Modena and Reggio Emilia, Via Campi 213/A, I-41100 Modena,(More)
For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron transport. We modify an existing hydrodynamic mobility model in order to achieve a better agreement with Monte Carlo (MC)(More)