Varatharajan Anbusathaiah

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We report on the discovery of a lead-free morphotropic phase boundary ͑MPB͒ in Sm doped BiFeO 3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi 0.86 Sm 0.14 FeO 3 with(More)
Heterostructured thin films differing either in their structure, composition, or in both have shown novel magnetic, [1,2] super-conducting, [3] ferroelectric, or electromechanical [4,5] responses. In the case of ferroelectrics, multilayers or superlattices have displayed enhanced polarization, [5–7] high dielectric permittiv-ity [8,9] and in some instances,(More)
Structure-electromechanical property correlations in rare-earth ͑RE͒-substituted ͑001͒ BiFeO 3 ͑BFO͒ epitaxial thin films have been investigated. Quantitative piezoelectric coefficient ͑d 33 ͒ and dielectric constant ͑␧ 33 ͒ measurements, in conjunction with selected area electron diffraction, reveal that the enhancement in d 33 and ␧ 33 at the morphotropic(More)
The direction of the ferroelectric polarization vector is a key factor infl uencing the properties of ferroelectric/piezoelectric [ 1 ] and multiferroic [ 2 ] materials. For instance, ferroelectric materials at morphotropic phase boundaries (MPB), where multiple structural phases with ferroelectric polarizations pointing in different crystallographic(More)
Multiferroic BiFeO 3 ͑BFO͒ thin films have been fabricated via flux mediated epitaxy with varying oxygen partial pressure and flux composition ͑Bi 2 O 3 : CuO͒ conditions. Transmission electron microscopy coupled with energy dispersive x-ray spectroscopy as well as piezoresponse force microscopy confirm, that with the correct flux and seed layer conditions,(More)
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