Varatharajan Anbusathaiah

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We report on the discovery of a lead-free morphotropic phase boundary ͑MPB͒ in Sm doped BiFeO 3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi 0.86 Sm 0.14 FeO 3 with(More)
Structure-electromechanical property correlations in rare-earth ͑RE͒-substituted ͑001͒ BiFeO 3 ͑BFO͒ epitaxial thin films have been investigated. Quantitative piezoelectric coefficient ͑d 33 ͒ and dielectric constant ͑␧ 33 ͒ measurements, in conjunction with selected area electron diffraction, reveal that the enhancement in d 33 and ␧ 33 at the morphotropic(More)
Heterostructured thin films differing either in their structure, composition, or in both have shown novel magnetic, [1,2] super-conducting, [3] ferroelectric, or electromechanical [4,5] responses. In the case of ferroelectrics, multilayers or superlattices have displayed enhanced polarization, [5–7] high dielectric permittiv-ity [8,9] and in some instances,(More)
Multiferroic BiFeO 3 ͑BFO͒ thin films have been fabricated via flux mediated epitaxy with varying oxygen partial pressure and flux composition ͑Bi 2 O 3 : CuO͒ conditions. Transmission electron microscopy coupled with energy dispersive x-ray spectroscopy as well as piezoresponse force microscopy confirm, that with the correct flux and seed layer conditions,(More)
The direction of the ferroelectric polarization vector is a key factor infl uencing the properties of ferroelectric/piezoelectric [ 1 ] and multiferroic [ 2 ] materials. For instance, ferroelectric materials at morphotropic phase boundaries (MPB), where multiple structural phases with ferroelectric polarizations pointing in different crystallographic(More)
Perovskite phase instability of BiMnO3 has been exploited to synthesize epitaxial metal oxide magnetic nanocrystals. Thin film processing conditions are tuned to promote the breakdown of the perovskite precursor into Bi2O3 matrix and magnetic manganese oxide islands. Subsequent cooling in vacuum ensures complete volatization of the Bi2O3, thus leaving(More)
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