This paper presents a novel approach and techniques for physics-based electromigration (EM) assessment in power delivery networks of VLSI systems. An increase in the voltage drop above the threshold… (More)
A novel physical model and a simulation algorithm are used to predict electromigration (EM)-induced stress evolution in dual inlaid copper interconnects. The aim of the current simulation was to… (More)
Incorporation of all important atom migration driving forces into the mass balance equation and its solution together with solution of the coupled electromagnetics, heat transfer, and elasticity… (More)
Physically based simulations are used to predict an electromigration (EM)-induced void nucleation and growth in dual-inlaid copper interconnects. Incorporation of all important atom migration driving… (More)
Electromigration (EM) has been considered to be the major reliability issue for current and future VLSI technologies. Current EM reliability analysis is overloaded by over-conservative and simplified… (More)
In this article, we propose a new dynamic reliability management (DRM) technique for emerging dark silicon manycore processors. We formulate our DRM problem as minimizing the energy consumption… (More)
Due to technology scaling, electromigration (EM) signoff has become increasingly difficult, mainly due to the use of inaccurate methods for EM assessment, such as the empirical Black's model. In this… (More)
This paper presents a novel approach and techniques for physics-based electromigration (EM) assessment in power delivery networks of very large scale integration systems. An increase in the voltage… (More)
This paper presents a novel approach and techniques for electromigration (EM) assessment in power delivery networks. An increase in the voltage drop above the threshold level, caused by EM-induced… (More)