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Physics-based electromigration assessment for power grid networks
- X. Huang, Tan Yu, V. Sukharev, S. Tan
- Physics, Computer Science51st ACM/EDAC/IEEE Design Automation Conference…
- 1 June 2014
A novel approach and techniques for physics-based electromigration (EM) assessment in power delivery networks of VLSI systems by replacing a currently employed conservative weakest segment criterion with an increase in the voltage drop above the threshold level, caused by EM-induced increase in resistances of the individual interconnect segments.
Power Grid Electromigration Checking Using Physics-Based Models
- S. Chatterjee, V. Sukharev, F. Najm
- Computer Science, PhysicsIEEE Transactions on Computer-Aided Design of…
- 1 July 2018
A novel finite-difference-based approach for power grid EM checking using physics-based models, that can account for process, voltage, and temperature variations across the die, and is suitable for very large scale integration circuits.
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure
A developed physical model and a simulation algorithm are used to predict electromigration (EM)-induced stress evolution in dual-inlaid copper interconnects. Incorporation of all important atom…
Physics-Based Electromigration Models and Full-Chip Assessment for Power Grid Networks
- X. Huang, A. Kteyan, S. Tan, V. Sukharev
- Physics, Computer ScienceIEEE Transactions on Computer-Aided Design of…
- 1 November 2016
A novel approach and techniques for physics-based electromigration (EM) assessment in power delivery networks of very large scale integration systems shows that the proposed method will lead to less conservative estimation of the lifetime than the existing Black-Blech-based methods.
Postvoiding Stress Evolution in Confined Metal Lines
- V. Sukharev, A. Kteyan, Xin Huang
- Materials ScienceIEEE Transactions on Device and Materials…
- 1 March 2016
Electromigration (EM)-induced voiding is an important reliability concern in modern integrated circuits. Resistance degradation in interconnect metal lines caused by voiding was studied in this paper…
Learning-based dynamic reliability management for dark silicon processor considering EM effects
- Taeyoung Kim, X. Huang, Hai-Bao Chen, V. Sukharev, S. Tan
- Computer Science, PhysicsDesign, Automation & Test in Europe Conference…
- 14 March 2016
Experimental results show that the proposed DRM algorithm can effectively reduce the energy consumption of a dark silicon manycore system when the system is not tightly constrained, and can outperform a simple global DVFS method significantly in this case.
Electromigration recovery modeling and analysis under time-dependent current and temperature stressing
- X. Huang, V. Sukharev, Taeyoung Kim, Hai-Bao Chen, S. Tan
- Engineering, Computer Science21st Asia and South Pacific Design Automation…
- 10 March 2016
A new physics-based dynamic compact EM model is proposed, which for the first time, can accurately predict the transient hydrostatic stress recovery effect in a confined metal wire and agrees very well with the numerical analysis results under any time-varying current density and temperature profiles.
Electromigration assessment for power grid networks considering temperature and thermal stress effects
- Xin Huang, V. Sukharev, J. Choy, Marko Chew, Taeyoung Kim, S. Tan
- Computer ScienceIntegr.
- 1 September 2016
Results of the simulations performed on the analyzed multi-layered power/ground nets show that traditional assumption of the uniform average temperature leads to inaccurate predictions of the time-to-failure and the consideration of thermal stress variation results in a retarded EM induced degradation.
Fast physics-based electromigration checking for on-die power grids
- S. Chatterjee, V. Sukharev, F. Najm
- Computer Science, PhysicsIEEE/ACM International Conference on Computer…
- 7 November 2016
A novel approach for EM checking using physics-based models of EM degradation, which effectively removes the inaccuracy, with negligible impact on run-time.
Dynamic electromigration modeling for transient stress evolution and recovery under time-dependent current and temperature stressing
A new physics-based dynamic compact EM model, which for the first time, can accurately predict the transient hydrostatic stress recovery effect in a confined metal wire and can be incorporated with existing dynamic thermal/power/reliability management and optimization approaches, devoted to reliability-aware optimization at multiple system levels.