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Journals and Conferences
Nodes in mobile Ad Hoc Network (MANET) do not rely on a central infrastructure but relay packets originated by other nodes. Mobile ad hoc networks can work properly only if the participating nodes… (More)
Inflammatory pseudotumors (IPTs) are benign lesions with unknown etiology, probably an immunological reaction to a traumatic or an infective insult or sometimes considered as an IgG4-related… (More)
Scaling STT-MRAM cells beyond 1X technology nodes will require MTJ devices smaller than 30 nm. For such small sizes, process-induced damage becomes a primary factor of device performance. A robust… (More)
Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last… (More)
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
Future magnetic recording media require firm control of the microstructure particularly with uniform grain size at the nanometer scale. Using self-assembling block copolymers as an etch-mask, a novel… (More)
In previous work, we reported on the fabrication of a regular template for the controlled two-phase growth of conventional CoPt-SiO2 PMR media. The template consisted of dome-morphology patterned… (More)
Spin-transfer-torque magnetic random access memory (STT-MRAM) is the most promising emerging non-volatile embedded memory. For most applications, a wide range of operating temperatures is required,… (More)
We present for the first time STT-MRAM devices with ultra low operating voltage and power compatible with next generation 0x node logic voltages. By engineering the tunnel barrier and improving the… (More)
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is the leading technology for next generation non-volatile embedded memories .