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Tight-binding approach to uniaxial strain in graphene
We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we
Electron-Electron Interactions in Graphene: Current Status and Perspectives
We review the problem of electron-electron interactions in graphene. Starting from the screening of long range interactions in these systems, we discuss the existence of an emerging Dirac liquid of
Strain engineering of graphene's electronic structure.
It is shown that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states, and confinement, which can be seen as basic elements for all-graphene electronics which, by suitable engineering of local strain profiles, could be integrated on a single graphene sheet.
Coulomb impurity problem in graphene.
It is shown that the Dirac equation, when properly regularized, provides a qualitative and quantitative low energy description of the problem and shows extra features that cannot be described by theDirac equation: namely, bound state formation and strong renormalization of the van Hove singularities.
Optical properties of strained graphene
The optical conductivity of graphene strained uniaxially is studied within the Kubo-Greenwood formalism. Focusing on inter-band absorption, we analyze and quantify the breakdown of universal
Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
The first detailed characterization of the sheet third-harmonic optical susceptibility, χ(3)s, of tungsten diselenide (WSe2) is reported, in very good agreement on the order of magnitude with recent reports for WSe2, which asserts the robustness of the values for |χ( 3)s|.
Coexistence of large conventional and planar spin Hall effect with long spin diffusion length in a low-symmetry semimetal at room temperature
This study suggests that manipulation of crystalline symmetries and strong SOC opens access to new charge-spin interconversion configurations and spin–orbit torques for spintronic applications.
Conductance across strain junctions in graphene nanoribbons
To address the robustness of the transport gap induced by locally strained regions in graphene nanostructures, the effect of disorder and smoothness of deformation is investigated within the
All-graphene integrated circuits via strain engineering
We propose a route to all-graphene integrated electronic devices by exploring the influence of strain on the electronic structure of graphene. We show that strain can be easily tailored to generate