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Towards the Integration of UML- and textual Use Case Modeling
In this paper, we present a metamodel for textual use case descriptions, structurally conforming to the UML, to specify the behavior of use cases in a flow-oriented manner. While being primarilyExpand
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Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
InGaN quantum wells were grown by metal organic vapor-phase epitaxy on polar (0 0 0 1), nonpolar (1 0  0) and on semipolar (1 0  2), (1 1  2), (1 0  1) as well as (2 0  1) oriented GaN substrates.Expand
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InGaN–GaN Disk Laser for Blue-Violet Emission Wavelengths
An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300 W, the slope efficiency 3.5%, and the threshold pump powerExpand
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MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
Abstract We report that a H 2 -free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β -Ga 2 O 3 to prevent the surface from damage. AExpand
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DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings
Single longitudinal mode emission of laterally coupled distributed-feedback (LC-DFB) laser diodes (LDs) based on InGaN/GaN multiquantum-well structures containing 10th-order surface Bragg gratingsExpand
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Interference Phenomena at Transparent Layers in Glow Discharge Optical Emission Spectrometry
At the performance of depth profiling by glow discharge optical emission spectroscopy (GD-OES) the intensities of optical emission lines of sample and sputter gas elements are measured in dependenceExpand
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Glow discharge optical emission spectroscopy as applied to the analysis of powdered materials
Abstract The qualification of glow discharge optical emission spectroscopy (GDOES) for the analysis of powdered materials briquetted to pellets after blending with an excess of copper powder isExpand
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Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap
For the realization and the improvement of GaN-based optoelectronic devices (light emitting diodes and laser diodes) emitting from the ultraviolet to the red wavelength range GaInN quantum wellExpand
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Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
An optically pumped GaN-based laser structure with 10th-order laterally coupled surface grating is demonstrated. The fabrication involved i-line photolithography and dry etching, avoiding moreExpand
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