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Estimation of HgCdTe band‐gap variations by differentiation of the absorption coefficient
A new simple nondestructive method for band‐gap estimation in HgCdTe layers is presented in this work. The theoretical approach is based on a qualitative empirical model that assumes two differentExpand
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Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes
Results of experimental measurements and theoretical analysis are presented for the TiAu/ZnS/CdTe/HgCdTe metal–insulator–semiconductor heterostructure. The passivation of HgCdTe is provided by aExpand
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Effective Mass and Energy-Mass Relationship
The particle effective mass is often a challenging concept in solid state physics due to the many different definitions of the effective mass that are routinely used. Also, the most commonly usedExpand
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Electron effective mass in graphene
  • V. Ariel, A. Natan
  • Physics
  • International Conference on Electromagnetics in…
  • 26 June 2012
The particle effective mass in graphene is a challenging concept because the commonly used theoretical expression is mathematically divergent. Expand
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Electrical and structural properties of epitaxial CdTe/HgCdTe interfaces
In this study, CdTe epilayers were grown by metalorganic chemical vapor deposition on epitaxial HgCdTe with the purpose of developing suitable passivation for HgCdTe photodiodes. Two types of CdTeExpand
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Compositionally graded HgCdTe photodiodes: Prediction of spectral response from transmission spectrum and the impact of grading
We have studied the infrared transmission spectrum and the optical performance of HgCdTe photodiodes containing a linear composition gradient in the active layer. Our objectives were to enable theExpand
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Monitoring HgCdTe layer uniformity by the differential absorption technique
In this letter, we demonstrate how the differential absorption technique can be applied to study band gap uniformity in HgCdTe samples. The transmission of HgCdTe wafers is measured at roomExpand
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Modeling of heterojunction HgCdTe photodiodes using approximate k • p approach
In this paper, we describe a new approach to simulation of HgCdTe devices based on an approximation for the k • p model. We use an approximate expression for the carrier density which includesExpand
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Investigation of epitaxial P-p CdTe/Hg0.775Cd0.225Te heterojunctions by capacitance-voltage profiling
We investigate the electrical properties of isotype P-p CdTe/Hg0.775Cd0.225Te heterojunctions grown in situ by the metalorganic chemical vapor deposition technique. The capacitance-voltage (C-V)Expand
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Calculation of semiconductor intrinsic properties using a nonparabolic three‐band model
The intrinsic carrier concentration and the Fermi level are calculated using an approximation of the three‐band k⋅p model. The approach is suitable for temperatures from 0 to 400 K and includes theExpand
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