By suitable change of the junction-base (heatsink) thermal resistance for commercially available power diode dice, it has been found out that at high temperature internal overheating is induced at the junction edge by the surface component of the reverse current. To change the junction-base thermal resistance, thin aluminium pellets of different dimension… (More)
The aim of the paper is to provide experimental results and analysis relating to the failure mechanism of the junction at operation near or in the breakdown region of electrical characteristic.
The surface component of reverse current of operating power PN junctions at high temperature, is a source of power dissipation concentrated in a very thin layer at the junction periphery. The resulted heat in this thin layer is removed towards the heat sink only through the peripheral part of the semiconductor die area. Typical commercial rectifier diodes… (More)
A temperature of 200degC for the PN junction of power silicon devices (diodes, thyristors, transistors) is known as a limit for their reliable performance. PN junction failure after operation above this temperature consists in excessive high current or even electrical short circuit when reverse bias voltage is applied. Enough information in the published… (More)
Due to high level of the leakage reverse current, commercial power silicon diodes available at this time have no specification in the data sheets for operation above 200 degC junction temperature. An experimental method is presented to extract information about the uniformity of the reverse current flow over the silicon die area. The power diode with copper… (More)
The present work proposes a genetic algorithm (GA) based method for the optimization of geometrical parameters to obtain maximum heat transfer in a micro-channel structure. The works were directed to the specific problems related to thermal transfer performances of micro-cooling systems on chip. Silicon etched micro-channels and water as cooling fluid are… (More)
The operation of commercial power silicon devices, available at this time, is not possible above 175-200/spl deg/C junction temperature, without risk of failure. The surface leakage reverse current component is a source of nonnegligible localized power dissipation at high temperature. An overheating at the junction peripheral surface is possible and the… (More)
In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: a b s t r a c t Typical blocking I–V characteristics are shown and analyzed for PN… (More)