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In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 /spl mu/m technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed.
Selection of optimized electron beam parameters for in-line monitoring is necessary to eliminate false signals. Application of electron beam to detect electrical defects, particularly leakages, for static random access memory (SRAM) cells poses a great challenge as it requires current measurement tool with nanometer resolution to complement it. By(More)
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