V. E. Sacksteder

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SUMMARY The past twelve years have seen the development of many algorithms for approximating matrix functions in O(N) time, where N is the basis size. These O(N) algorithms rely on assumptions about the spatial locality of the matrix function; therefore their validity depends very much on the argument of the matrix function. In this article I carefully(More)
We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene(More)
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