V. E. Sacksteder

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The past twelve years have seen the development of many algorithms for approximating matrix functions in O(N) time, where N is the basis size. These O(N) algorithms rely on assumptions about the spatial locality of the matrix function; therefore their validity depends very much on the argument of the matrix function. In this article I carefully examine the(More)
We present angle-resolved photoemission spectroscopy measurements of the quasi-one-dimensional superconductor K_{2}Cr_{3}As_{3}. We find that the Fermi surface contains two Fermi surface sheets, with linearly dispersing bands not displaying any significant band renormalizations. The one-dimensional band dispersions display a suppression of spectral(More)
Vincent Sacksteder, IV,1,* A. A. Pervishko,2 and I. A. Shelykh2,3,4 1Division of Physics, Royal Holloway, University of London, Egham, Surrey TW20 0EX, United Kingdom 2Division of Physics and Applied Physics, Nanyang Technological University 637371, Singapore 3Science Institute, University of Iceland, Dunhagi-3, IS-107 Reykjavik, Iceland 4National Research(More)
We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene(More)
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