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In this paper, a comparison between the DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) and its equivalent circuit composed of standard components is proposed. We demonstrate the DCG-FGT advantages with measurement and simulations under electrical simulator (ELDO). It is not easily to reproduce the DCG-FGT operating mode with standard MOS technology.
Full characterization of a new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is(More)
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