V. Balasubramanian

Learn More
Hatter went on in a mournful tone, " And ever since then, time won't do a thing that I ask! It's always six o'clock now. " A bright idea came into Alice's head. " Is that the reason so many tea-things are put out here? " she asked. " Yes, that's it, " said the Hatter with a sigh: " It's always teatime , and we've no time to wash the things between whiles. "(More)
Merrill Lynch has initiated a major effort called the Trusted Global Advisor to provide instantaneous access to current financial information to about 20,000 financial consultants and other professionals across the corporation. As part of this effort, marketing information about products and services will be delivered to financial consultants, clients, and(More)
The paper presents a new method of characterisation of texture changes in foot sole soft tissue ultrasound (US) images, as observed to occur in diabetic subjects, using wavelet transforms. US images of the soft tissue subcutaneous layer were taken with a 7.5 MHz linear transducer probe placed parallel to the skin surface. The foot sole hardness was(More)
A novel pulsed class-B load-pull measurement system is developed to characterize GaN HEMTs targeting the design of high-efficiency class-B or class-C power amplifiers operating under a pulsed-bias and pulsed-RF (pulsed-IV/RF) condition. Based on a large-signal network analyzer, the test system uses an active load-pull method to provide stable open-loop(More)
After being both a designer and a developer, I feel one of the most important factors contributing to the lack of usable interfaces (what I call GUI disasters) and hence software products is the knowledge gap in addition to the three gaps (language, example, and point-of-view) mentioned by Rettig [1]. The lack of knowledge about the importance of design in(More)
— To provide a proper load impedance termination under class-B operation, for pulsed-IV biasing and pulsed-RF (pulsed-IV/RF) excitations, an adaptive harmonic active load is presented. Pulsed-IV/RF measurement is the technique of choice for characterization and modeling of RF devices as it guarantees that the transistor is not afflicted by low-frequency(More)