Uy Hyun Choi

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We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the(More)
We developed a method to improve the electrical performance and stability of passivated amorphous In-Ga-Zn-O thin-film transistors by simultaneous ultraviolet and thermal (SUT) treatment. SUT treatment was carried out on fully fabricated thin-film transistors, including deposited source/drain and passivation layers. Ultraviolet (UV) irradiation(More)
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