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—Phase noise in mutually synchronized oscillator systems is analyzed for arbitrary coupling and injection-locking topologies, neglecting amplitude noise, and amplitude modulation (AM) to phase modulation (PM) conversion. When the coupling phase is chosen properly (depending on the oscillator model), the near-carrier phase noise is reduced to 1=N 1=N 1=N(More)
— Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S 21 of 5.2±1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S 21 of 12±1dB from 2-32GHz. The process consists of(More)
Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broadcasting. ABSTRACT | The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance.(More)
Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in(More)
— Previous investigations of noise in mutually synchronized coupled-oscillator systems are extended to include the effects of phase noise introduced by externally injected signals. The analysis is developed for arbitrarily coupled arrays and an arbitrary collection of coherent injected signals, and is illustrated with the specific case of linear chains of(More)
Citation Lin, Chung-Han et al. " Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly(More)
—A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with(More)
iv ACKNOWLEDGEMENTS I would like to foremost thank Professor Robert York for his continuous guidance and support during my studies. He has been very involved with my research and I benefited tremendously from his depth of knowledge in many diverse fields. I am also thankful to Professor James Speck, Professor Umesh Mishra and Dr. Jonathan Lynch for(More)