Umesh K. Mishra

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Phase noise in mutually synchronized oscillator systems is analyzed for arbitrary coupling and injection-locking topologies, neglecting amplitude noise, and amplitude modulation (AM) to phase modulation (PM) conversion. When the coupling phase is chosen properly (depending on the oscillator model), the near-carrier phase noise is reduced to 1=N that of a(More)
A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4–8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the(More)
Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in(More)
Previous investigations of noise in mutually synchronized coupled-oscillator systems are extended to include the effects of phase noise introduced by externally injected signals. The analysis is developed for arbitrarily coupled arrays and an arbitrary collection of coherent injected signals, and is illustrated with the specific case of linear chains of(More)
A 36-dBm high-linearity single-ended commonsource class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with(More)
iv ACKNOWLEDGEMENTS I would like to foremost thank Professor Robert York for his continuous guidance and support during my studies. He has been very involved with my research and I benefited tremendously from his depth of knowledge in many diverse fields. I am also thankful to Professor James Speck, Professor Umesh Mishra and Dr. Jonathan Lynch for(More)
This letter presents a two-stage quasi-class-E monolithic microwave integrated circuit power amplifier at 2.0 GHz, which is based on field-plated GaN high electron mobility transistor technology. It consists of a driver stage and a power stage. The circuit schematic is described. The amplifier achieves an output power of 37.5 dBm into a 50load, a power(More)
Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S21 of 5.2±1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S21 of 12±1dB from 2-32GHz. The process consists of 200nm(More)