Umang B. Shah

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In this work, 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-to-source/gate-to-drain (L<inf>SIDE</inf>) have(More)
In this work, non-planar, multi-gate InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (L<inf>SIDE</inf>)(More)
In this article we demonstrate a Ge p-channel QWFET with scaled TOXE = 14.5&#x00C5; and mobility of 770 cm<sup>2</sup>/V*s at n<inf>s</inf> =5&#x00D7;10<sup>12</sup> cm<sup>&#x2212;2</sup> (charge(More)