Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the… (More)
Structure-property relationships in ferroelectrics extend over several length scales from the individual unit cell to the macroscopic device, and with dynamics spanning a broad temporal domain. Characterizing the multi-scale structural origin of electric field-induced polarization reversal and strain in ferroelectrics is an ongoing challenge that so far has… (More)
We apply the ℓ 1 minimizing technique of compressive sensing (CS) to non-linear quadratic observations. For the example of coherent X-ray scattering we provide the formulae for a Kalman filter approach to quadratic CS and show how to reconstruct the scattering data from their spatial intensity distribution.
We apply the ℓ 1 minimizing technique of compressive sensing (CS) to non-linear quadratic observations. For the example of Coherent X-ray scattering we provide the formulae for a Kalman filter approach to quadratic CS and show how to reconstruct the scattering data from their spatial intensity distribution.
The time evolution of the electron density and the resulting time dependence of Fourier components of the X-ray polarizability of a crystal irradiated by highly intense femtosecond pulses of an X-ray free-electron laser (XFEL) is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the… (More)
Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAsB substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between… (More)
Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75%… (More)
The glass transition process gets affected in ultrathin films having thickness comparable to the size of the molecules. We observe systematic broadening of the glass transition temperature (T(g)) as the thickness of an ultrathin polymer film reduces below the radius of gyration but the change in the average T(g) was found to be very small. The existence of… (More)