Ulkarsh Shah

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This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO x-2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t OXE) and low gate leakage (J G) and (ii) effective carrier confinement and high(More)
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