Ulf König

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In this paper, the technology of MBE-based materials growth for high cutoff frequency (f/sub T/) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb) surface pre-deposition, have been presented in the course(More)
In this paper. a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP85 10C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for measuring radiofrequency performance of SiGe HBT. The measurements showed satisfactory results. The SiGe HBT cutoff(More)
—The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a(More)
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