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In this work, 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-to-source/gate-to-drain (LSIDE) have been(More)
In this work, non-planar, multi-gate InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (LSIDE) of 5nm are(More)
This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO<inf>x</inf>-2nm InP) in the In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum-well field effect transistor (QWFET) on(More)