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- Publications
- Influence
RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS
- F. Hatami, N. Ledentsov, +13 authors Z. Alferov
- Materials Science
- 31 July 1995
Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self‐organized way on a GaAs(100) surface upon… Expand
Mechanocatalytic Depolymerization of Lignocellulose Performed on Hectogram and Kilogram Scales
- Marcelo Daniel Kaufman-Rechulski, M. Käldström, U. Richter, F. Schüth, Roberto L. Rinaldi
- Chemistry
- 29 April 2015
Mechanocatalytic depolymerization of lignocellulose constitutes a new frontier in biorefining. In a one-pot process, the combination of mechanical forces and acid catalysis leads to the full… Expand
Application of Mueller matrix spectroscopic ellipsometry to determine line edge roughness on photomasks
- A. Heinrich, I. Dirnstorfer, +4 authors T. Mikolajick
- Engineering, Materials Science
- Other Conferences
- 1 October 2013
We report on Mueller Matrix spectroscopic ellipsometry (MM-SE) to examine undesired asymmetries in structural parameters, i.e. line edge roughness (LER). The investigation was done on a photomask… Expand
Fast Analysis of Element Contents by Inelastic Scattering of Neutrons and the Method of Time Correlated Associated Particles
- B. Heinrich, G. Musiol, U. Richter
- Chemistry
- 1983
The element content measurement programme of the Dresden University of Technology, Department of Physics, using the γ-radiation after inelastic scattering of 14 MeV neutrons is described. To suppress… Expand
Sensitivity analysis for OMOG and EUV photomasks characterized by UV-NIR spectroscopic ellipsometry
- A. Heinrich, I. Dirnstorfer, J. Bischoff, K. Meiner, U. Richter, T. Mikolajick
- Materials Science, Engineering
- Photomask Technology
- 9 September 2013
We investigated the potentials, applicability and advantages of spectroscopic ellipsometry (SE) for the characterization of high-end photomasks. The SE measurements were done in the ultraviolet-near… Expand
Photomask CD and LER characterization using Mueller matrix spectroscopic ellipsometry
- A. Heinrich, I. Dirnstorfer, +4 authors T. Mikolajick
- Engineering, Materials Science
- European Mask and Lithography Conference
- 17 October 2014
Critical dimension and line edge roughness on photomask arrays are determined with Mueller matrix spectroscopic ellipsometry. Arrays with large sinusoidal perturbations are measured for different… Expand
SiGe/Si layers—early stages of plastic relaxation
- R. Koehler, H. Raidt, W. Neumann, J. Pfeiffer, H. Schäfer, U. Richter
- Materials Science
- 21 January 2005
The plastic relaxation of SiGe/Si is closely related to the nucleation of misfit dislocations at early stages. We have investigated the very early stages at annealing temperatures ranging from 520°C… Expand
Elastic properties and piezoelectric coupling coefficients of nitrilotriacetic acid, (N(CH2COOH)3 = NTA = H3NTA′), Li3NTA′ · 2 H2O, Na2HNTA′, K2Zr(NTA′)2 · 2 H2O, Rb2Zr(NTA′)2 · 2 H2O, Cs2Zr(NTA′)2 ·…
- S. Haussühl, U. Richter
- Chemistry
- 1996
Elastic and thermoelastic constants of nitrilotriacetic acid, N(CH 2 COOH) 3 , Li 3 N(CH 2 COO) 3 .2H 2 O, Na 2 HN(CH 2 COO) 3 , X 2 Zr(N(CH 2 COO) 3 ) 2 .y H 2 O (X = K, Rb, Cs; y = 1, 2) and (NH 4… Expand
Ordering in Ga x In 1−x As y P 1−y Detected by Diffraction Methods
- I. Rechenberg, A. Oster, A. Knauer, U. Richter, J. Menniger, M. Weyers
- Materials Science
- 1995
Pyroelectric, dielectric, piezoelectric and electrooptic properties of monoclinic nitrilotriacetic acid N(CH2COOH)3 and orthorhombic X2Zr[N(CH2COO)3]2 · 2 H2O (X = K, Rb, Cs)
- U. Richter, S. Haussühl
- Chemistry
- 1 April 1987
Large single crystals of monoclinic nitrilotriacetic acid, N(CH2COOH)3, NTA, and of orthorhombic isotypic X2Zr[N(CH2COO)3]2 · 2 H2O (X = K, Rb, Cs) have been grown from aqueous solutions. They… Expand