U. Gogineni

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IBM Microelectronics Division, Essex Junction, VT, vidhar@us.ibm.com *Ericsson Mobile Platforms AB, Nya Vattentornet, SE-221 83 Lund, Sweden, Lars.Tilly@emp.ericsson.se **IBM Microelectronics Division, East Fishkill, NY We present for the first time a fully-manufacturable 0.5μm/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/ PCS/ WCDMA) power(More)
We present for the first time a fully-manufacturable 0.5&#x003BC;m/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/PCS/WCDMA) power amplifier applications, highlighting HBT device design, safe-operating area, and module performance. This technology features a high- breakdown transistor (BV<sub>CBO</sub> > 20V), with f<sub>T</sub> exceeding(More)
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