Tzu-Heng Chang

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Nanoscale CMOS technologies, which were sensitive to electrostatic discharge (ESD), have been widely used to implement radio-frequency (RF) integrated circuits. Against ESD damages, ESD protection design must be included in RF circuits. A novel modified LC-tank ESD protection design was presented in this work. Such ESD protection circuit had been designed(More)
Nanoscale CMOS technologies have been widely used to implement radio-frequency (RF) integrated circuits. However, the thinner gate oxide and silicided drain/source in nanoscale CMOS technologies seriously degrade the electrostatic discharge (ESD) robustness of RF circuits. Against ESD damage, on-chip ESD protection design must be included in RF circuits. As(More)
This paper describes a set of miniature, three-stage 60 GHz LNAs designed in 40 nm LP CMOS. The designs prove effectiveness and ease of use of inductor-based ESD protection schemes applied to mm-wave circuits. The measured ESD protection levels reach 4.5 kV HBM, up to 7.6 A for VFTLP tests and a record of 1 kV CDM. At the same time, the NF of the LNAs is(More)
To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at(More)
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