Tushar K. Thrivikraman

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—We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunc-tion bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise(More)
We present measured results and analysis from high-power testing of three different X-band SiGe HBT LNAs. The custom measurement setup allowed high RF power (up to 32 dBm) to be applied to the input of the LNAs for 400 sec. During the stressing, the bias current was monitored and the pre/post-stress dc and ac characteristics were measured. The results(More)
—We present a high-dynamic range (HDR) X-band LNA implemented in silicon-germanium (SiGe) technology targeting high-performance radar and wireless communications applications. To our knowledge, this is the first Si-based LNA to achieve over 30 dB gain, 30 dBm of OTOI, and 2 dB noise figure at X-band. System-level performance simulations clearly show the(More)
SUMMARY This paper presents an organic, lightweight X-band antenna array with integrated silicon germanium (SiGe) low noise amplifiers (LNA) and 3-bit phase shifters (PS). The SiGe LNAs and PSs were successfully integrated onto an 8x1 lightweight antenna stack-up utilizing a multilayer liquid crystal polymer (LCP) substrate. Successful comparisons of the(More)
This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 &#x00D7; 1 mm<sup>2</sup> (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB(More)
Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by(More)
iii ACKNOWLEDGEMENTS I would first like to express my deepest gratitude to Dr. John D. Cressler for his guidance and support as my advisor. He is an exemplary professor and scholar, his enthusiasm for research and teaching is truly inspirational. As I strive for an academic position in my future career, I hope to be able to instill in others the level of(More)
This work presents a new measurement technique, mixed-signal active harmonic load-pull (MSALP) developed by Anterverta-mw in partnership with Maury Microwave, that allows for wide-band ultra-high efficiency amplifiers to be designed using GaN technology. An overview of the theory behind active load-pull is presented and why load-pull is important for(More)
This paper presents a novel test setup for characterizing intermodulation distortion in advanced devices and circuits. The setup uses a network analyzer to measure power levels of the fundamental and IM3 products for a two-tone input. It is shown that if the power calibration is correctly performed, the intermodulation distortion terms from a power sweep(More)
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