Tuhin Guha Neogi

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A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.
We present a rigorous electrical and optical analysis of a highly scaled, graded-base, SiGe heterojunction bipolar transistor (HBT) electrooptic (EO) modulator. In this study, we propose a 2-D electrical model and a 3-D optical model for a graded-base SiGe HBT structure that is capable of operating at a data bit rate of 250 Gbit/s or higher. In this(More)
We present a rigorous electrical and optical analysis of a strained and graded base SiGe Heterojunction Bipolar Transistor (HBT) electrooptic (EO) modulator. In this paper, we propose a 2-D model for a graded base SiGe HBT structure that is capable of operating at a data bit rate of 80 Gbit/s or higher. In this structure, apart from a polysilicon/(More)
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