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Comparison of measurements and simulation results in 300 mm CZ silicon crystal growth
A special thermal modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory (CGL) of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was usedExpand
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Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals
Abstract Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm andExpand
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A novel selenization technique for fabrication of superconducting FeSex thin film
Abstract A combinative method with reactive sputtering deposition and selenization technique was applied to prepare superconducting FeSex films on LaAlO3 substrates successfully. The influence ofExpand
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Research on Development Strategies for China’sAdvanced Materials Industry
Received date: 25 May 2016; revised date: 28 June 2016 Author information: Tu Hailing, General Research Institute for Nonferrous Metals, honorary president, academician of the China’s Academy ofExpand
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