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Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures

• Chunmeng Dou, Dennis Lin, +8 authors Guido Groeseneken
• 2014

ARTOT: Autonomous real-time object detection and tracking by a moving camera

• Plamen P. Angelov, Chirag Gude, Pouria Sadeghi-Tehran, Tsvetan Ivanov
• 2012 6th IEEE International Conference…
• 2012

A new approach to autonomously detect and track a moving object in a video captured by a moving camera (possibly mounted on a unmanned vehicle, UxV) is proposed in this paper. It is based on a… (More)

Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

• A. Alian, Salim El Kazzi, +6 authors Nadine Collaert
• 2018 IEEE Symposium on VLSI Technology
• 2018

Pocketed vertical nanowire InGaAs/GaAsSb tunnel FETs (TFET) with sub-threshold swing (SS) reaching 47 mV/dec are demonstrated. The achieved sub-threshold performance is the steepest reported so far… (More)

Beyond-Si materials and devices for more Moore and more than Moore applications

• Nadine Collaert, A. Alian, +23 authors Aaron Voon-Yew Thean
• 2016 International Conference on IC Design and…
• 2016

In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of… (More)

Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices

• A. Alian, M. Ali Pourghaderi, +4 authors Aaron Voon-Yew Thean
• 2013 IEEE International Electron Devices Meeting
• 2013

InGaAs channel MOSFET devices with a channel thickness down to 3nm were fabricated and systematically characterized. Thinner channels result in improved electrostatics, however, the mobility rapidly… (More)

ESD characterization of planar InGaAs devices

• Z. Ji, Dimitri Linten, +14 authors Guido Groeseneken
• 2015 IEEE International Reliability Physics…
• 2015

We present a comprehensive study of ESD reliability (TLP) on planar nMOSFETs with In0.53Ga0.47As as the channel material. Two types of traps are found during ESD stress. They are formed through… (More)

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