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Self-heating effects (SHEs) of bulk and SOI FETs including 6-nm ultra-thin (UT) BOX devices are systematically investigated and compared using the four-terminal gate resistance technique. For bulk(More)
Carrier transport in heavily doped extremely thin silicon- on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility ((More)
Deformation potential (D<sub>ac</sub>), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied(More)