Tsin-Dong Lee

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This article compares resonant ultrasound spectroscopy ͑RUS͒ and other resonant methods for the determination of viscoelastic properties such as damping. RUS scans from 50 to 500 kHz were conducted on cubical specimens of several materials including brass, aluminum alloys, and polymethyl ͑methacrylate͒ ͑PMMA͒, a glassy polymer. Comparison of damping over(More)
Laser-induced fluorescence (LIF) of carbon dioxide is investigated with excitation between 215 and 255 nm with spectrally resolved detection in 5–40 bar premixed CH 4 /O 2 /Ar and CH 4 /air flat-flames at fuel/air ratios between 0.8 and 1.9. The LIF signal consists of a broad (200–450 nm) continuum with a faint superimposed structure, and this signal is(More)
We theoretically and experimentally generate stationary crescent surface solitons pinged to the boundary of a microstructured vertical cavity surface emission laser by triggering the intrinsic cavity mode as a background potential. Instead of a direct transition from linear to nonlinear cavity modes, we demonstrate the existence of symmetry-breaking(More)
We study experimentally an electrically pumped GaAs-based bandgap structure based on a vertical cavity surface emitting laser (VCSEL). We demonstrate that a microcavity embedded into this bandgap VCSEL structure supports localized optical modes without any holding beam. We propose a model of surface-structured VCSELs based on a reduced dissipative wave(More)
We report experimental observations of cavity solitons in a surface-photonic-crystal-structured Vertical Cavity Surface Emission Laser by using the near-field scanning optical microscope. Comparisons between linear and nonlinear localized modes, i.e. Defect modes and cavity solitons, are illustrated experimentally and numerically. A general method to(More)
High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n +-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers is 70 Å/1200 Å. The indium content (x)(More)
We demonstrate chaotic mode lasing in vertical cavity surface emitting lasers at room temperature, with an open cavity confined laterally by the native oxide layer. Instead of introducing any defect mode, we show that suppression of lower-order cavity modes can be achieved by destroying vertical reflectors with a surface microstructure. Lasing on chaotic(More)
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