Tsang-Chuan Chang

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Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber(More)
Some of Taiwan genuine products are the first position of market share around the world, and there are also many competitors show their capability in challenging the position of Taiwan manufacture. The strategy for products in the stage of maturity under steep competition is to increase their quality and yield rate which will prevent unnecessary waste.(More)
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