Tsang-Chuan Chang

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  • F. M. Davis, L. A. Gossett, +11 authors C. Heusser
  • 1993
A summary of the properties of CGP 51901 is shown in Table 3. On the basis of its binding to IgE and IgE-secreting cells and its activity in vitro and in vivo, CGP 51901 is expected to be able to decrease serum IgE by direct clearance of IgE and by reduction of the numbers and productivity of IgE-secreting cells. The end result of reduction of IgE in the(More)
The interaction between the Fc portions of antibodies and Fc receptors (FcR) on monocytes and macrophages is well known for such immune effector functions as the phagocytosis of antibody-coated bacterial and viral particles. Two additional functions of this Fc-FcR interaction have been described recently and both relate to the regulatory aspects of immune(More)
Some of Taiwan genuine products are the first position of market share around the world, and there are also many competitors show their capability in challenging the position of Taiwan manufacture. The strategy for products in the stage of maturity under steep competition is to increase their quality and yield rate which will prevent unnecessary waste.(More)
Single-crystal atomic-layer-deposited (ALD) Y 2 O 3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD(More)
The studies of the biological effects of OKT3 monoclonal antibody on mature human T cells demonstrate that binding to a differentiation antigen by an antibody can modulate the specialized functions of the cells bearing the antigen. OKT3 induces T cells to proliferate and to secrete gamma interferon. The antibody also inhibits cytotoxic T cells from lysing(More)
In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different(More)
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