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Some of Taiwan genuine products are the first position of market share around the world, and there are also many competitors show their capability in challenging the position of Taiwan manufacture. The strategy for products in the stage of maturity under steep competition is to increase their quality and yield rate which will prevent unnecessary waste.(More)
Single-crystal atomic-layer-deposited (ALD) Y 2 O 3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD(More)
In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different(More)
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