Trupti Ranjan Lenka

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The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to(More)
In this paper, we report on InAlN/AlN/GaN High Electron Mobility Transistor (HEMT) having 0.25&#x03BC;m gate length with semi insulating SiC substrate. The Current-Voltage (I-V), intrinsic gate-source capacitance (C<sub>gs</sub>) and gate-drain capacitance (C<sub>gd</sub>) of InAlN/AlN/GaN HEMT characteristics are presented. By using the ATLAS device(More)
We report ultra thin InAlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (HEMT) with AlN spacer layer by achieving 374GHz current gain cut-off frequency. The lattice matched InAlN/AlN/GaN HEMT with a 0.17 fraction of Indium content was enhanced the high frequency characteristics with a 30nm gate length by prevent the dissemination of(More)
As technology scales, VLSI performance has experienced an exponential growth. As feature sizes shrink, however, we will face new challenges such as soft errors (single-event upsets) to maintain the reliability of circuits. Recent studies have tried to address soft errors with error detection and correction techniques such as error correcting codes and(More)
In this paper the behavior of Gate Capacitance with the nanoscale variation of barrier thickness in Gallium Nitride (GaN) based metal oxide semiconductor High electron mobility transistor (MOSHEMT) is presented. The Gate Capacitance has been calculated for Aluminum Nitride/Gallium Nitride (AlN/GaN) and Aluminum Indium Nitride/Gallium Nitride (AlInN/GaN)(More)
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