Trevor J. Thornton

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The study of the behavior of ion-channels can provide significant information to detect metal ions and small organic molecules in solution. Discrimination of different analytes can be performed by extracting appropriate features from the ion-channel signals and using them for classification. In this paper, we consider features extracted from the Fourier,(More)
Three cases of nephritis after mild upper-respiratory-tract infection occurred in five members of a family running a small dairy farm in North Yorkshire, Streptococcus zooepidemicus (Lancefield group C) was cultured from the throats of three of those affected. The organisms were shown to produce endostreptosin, a recently discovered cytoplasmic antigen of(More)
Enhanced voltage silicon metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated on a 45 nm SOI CMOS technology with no process changes. MESFETs scaled to L<sub>g</sub> = 184 nm were fabricated and show a peak f<sub>T</sub> of 35 GHz, current drive of 112 mA/mm and breakdown voltages exceeding 4.5 V whereas the nominal CMOS voltage was(More)
A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of &lt;;170mV at 1A load current while occupying 0.245mm<sup>2</sup> of die area. The approach includes a novel depletion mode n-channel MESFET in a low(More)
This article describes 40V N-channel MESFETs fabricated at a commercial 32nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. The 32nm technology node is the most advanced technology node to date for MESFET fabrication and builds upon previous work completed at other process nodes. High voltage MESFETs were(More)
In this paper, a novel wireless sensor network discovery algorithm is presented which estimates the locations of a large number of low powered, randomly distributed sensor nodes. Initially, all nodes are at unknown locations except for a small number which are termed the &#x201C;anchor&#x201D; nodes. The remaining nodes are to be located as part of the(More)
A high voltage compliance silicon metal-semiconductor-field-effect-transistor (MESFET) fabricated using a 45nm SOI CMOS process has been designed for RF power amplifier applications requiring P<sub>out</sub> greater than 1W. The breakdown voltage of the MESFET is more than 15V and allows a large-signal drain voltage swing that greatly exceeds the breakdown(More)
A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance(More)
In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high(More)
i ABSTRACT Power management plays a very important role in the current electronics industry. Battery powered and handheld applications require novel power management techniques to extend the battery life. Most systems have multiple voltage regulators to provide power sources to the different circuit blocks and/or subsystems. Some of these voltage regulators(More)