Trevor J. Thornton

Learn More
We demonstrate the microfabrication of a low-noise silicon based device with integrated silver/silver chloride electrodes used for the measurement of single ion channel proteins. An aperture of 150 microm diameter was etched in a silicon substrate using a deep silicon reactive ion etcher and passivated with 30 nm of polytetrafluoroethylene via chemical(More)
The study of the behavior of ion-channels can provide significant information to detect metal ions and small organic molecules in solution. Discrimination of different analytes can be performed by extracting appropriate features from the ion-channel signals and using them for classification. In this paper, we consider features extracted from the Fourier,(More)
Enhanced voltage silicon metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated on a 45 nm SOI CMOS technology with no process changes. MESFETs scaled to L<sub>g</sub> = 184 nm were fabricated and show a peak f<sub>T</sub> of 35 GHz, current drive of 112 mA/mm and breakdown voltages exceeding 4.5 V whereas the nominal CMOS voltage was(More)
A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of &lt;;170mV at 1A load current while occupying 0.245mm<sup>2</sup> of die area. The approach includes a novel depletion mode n-channel MESFET in a low(More)
A close-packed monolayer of zinc 5,10,15,20-tetrakis(3-carboxyphenyl)porphyrin has been prepared and deposited on the thin native oxide covering the surface of an SOI-MOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor) using Langmuir-Blodgett techniques. When the device is exposed to amine vapors in a nitrogen atmosphere, the(More)
In this paper, a novel wireless sensor network discovery algorithm is presented which estimates the locations of a large number of low powered, randomly distributed sensor nodes. Initially, all nodes are at unknown locations except for a small number which are termed the &#x201C;anchor&#x201D; nodes. The remaining nodes are to be located as part of the(More)
B. Ashcroft, B. Takulapalli, J. Yang, G. M. Laws , H. Q. Zhang , N. J. Tao , S. Lindsay, D. Gust, and T. J. Thornton 3 1 Department of Physics & Astronomy, P.O. Box 871504, Arizona State University, Tempe, AZ 85287, USA 2 Center for Solid State Electronics Research, P.O. Box 876206, Arizona State University, Tempe, AZ 85287, USA 3 Department of Electrical(More)
We present experimental measurements of electromigration current through a single cylindrical nanopore. A single cylindrical nanopore with 175 nm diameter was fabricated in silicon in series with two micropores with 2 and 100 microm diameters. Thick electrical double layers (EDLs) (kappa a approximately 1) exhibit current rectification due to asymmetric(More)
A high voltage compliance silicon metal-semiconductor-field-effect-transistor (MESFET) fabricated using a 45nm SOI CMOS process has been designed for RF power amplifier applications requiring P<sub>out</sub> greater than 1W. The breakdown voltage of the MESFET is more than 15V and allows a large-signal drain voltage swing that greatly exceeds the breakdown(More)
Metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated using a 150 nm partially depleted silicon-on-insulator CMOS technology. A peak f<inf>T</inf> of 40 GHz and peak breakdown voltages of up to 12V were measured. Comparatively, the CMOS transistors on the same process have a maximum steady-state voltage limit of 1.95V. TOM3 model for(More)