Tracey Krakowski

  • Citations Per Year
Learn More
Silicon complementary bipolar processes offer the possibility of realizing high-performance circuits for a variety of analog applications. This paper presents a summary of silicon complementary bipolar process technology reported in recent years. Specifically, an overview of a family of silicon complementary bipolar process technologies, called Vertically(More)
This paper analyzes the transit-time effect of a bipolar biased at base-collector junction breakdown condition. Both simulation and experiment show that dynamic negative resistance, due to the transit-time effect, can be achieved under the avalanche breakdown condition. Therefore, a bipolar biased at breakdown can be used as a transit-time diode, with the(More)
This paper presents the characterization of intermodulation distortion in pnp SiGe HBTs on SOI. For the first time, measured results of pnp SiGe HBTs are compared against Spectre-based simulations using both HICUM and VBIC compact models, after the systematic selection of the appropriate corner models. It is shown that the HICUM model more accurately(More)
  • 1