Toshiyuki Oishi

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We investigated the efficacy of the antihypertensive drug telmisartan (Tel) and the mechanisms underlying the progression from simple steatosis to nonalcoholic steatohepatitis (NASH) in a medaka (Oryzias latipes) NASH model. We used the NASH activity score (NAS) developed in humans to assess the histology of the medaka NASH model and found that NAS(More)
GaN HEMTs have demonstrated higher power density and efficiency over existing technologies such as silicon and gallium arsenide (GaAs) based RF and microwave transistors [1]. Until recently, improvements in the design of GaN semiconductor device had focused on Ga-polar GaN based HEMTs. Lately, N-polar GaN shows the advantage over Ga-polar device in making(More)
We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-m-gate-length multi-channel transistors. E-mode operations demonstrate a positive small(More)
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