Toshimitsu Ohmine

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A new topography simulation method has been developed for SF<inf>6</inf>/O<inf>2</inf>/Si plasma etching of trench gates in IGBTs. This method calculates the ion and fluorine radical flux parameters required for the topography simulation from the etching rate and selectivity obtained from simple basic experiments. The O radical flux was assumed as a(More)
—Filling high aspect ratio trenches is an essential manufacturing step for state of the art memory cells. Understanding and simulating the transport and surface processes enables to achieve voidless filling of deep trenches, to predict the resulting profiles, and thus to optimize the process parameters and the resulting memory cells. Experiments of arsenic(More)
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