Toshihiro Kugimiya

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Nineteen-nm depth ultra shallow and 1.7 k/spl Omega//sq. low resistive junctions were fabricated by Sb implantation. The shallowness of the junction is attributed to the low diffusive nature of Sb. The junction was applied to 0.15 /spl mu/m MOSFETs, and excellent suppression of short channel effect and G/sub m/ improvement were confirmed.
Defects-induced contact misalignment when combining embedded SiGe with flash lamp annealing (FLA) on high performance 40 nm CMOS process has been analyzed both by experiments and novel dislocation loop dynamics simulation. We have found that slips which are created at the SiGe dummy patterns worsen the contact misalignment for the first time. Design guide(More)
A comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) was performed by means of photoinduced transient spectroscopy (PITS). When the a-IGZO thin films were deposited with 4% O<sub>2</sub> partial pressure (P/P), a dominant peak with a maximum of around 100 K was clearly observed(More)
We propose a framework to describe the cooperative orientational motions of water molecules in liquid water and around solute molecules in water solutions. From molecular dynamics (MD) simulation a new quantity "site-dipole field" is defined as the averaged orientation of water molecules that pass through each spatial position. In the site-dipole field of(More)
High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum-nickel (Al-Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al-Ni layer by a 1-keV Ar sputtering, the(More)
An Al-N system optical absorption layer has been developed, to be used for Al-based metal mesh electrodes on touch screen panels. The triple-layered electrode effectively suppresses the optical reflection in both visible light and the blue color region and exhibits excellent wet etching property that accommodates micro-fabrication. Due to its high noise(More)
We have investigated the microwave-detected photoconductivity responses from the amorphous In–Ga–Zn–O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the(More)
Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 &#x00B0;C, the onset of the TPYS spectra(More)
Electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films were evaluated using metal-oxide-semiconductor (MOS) diodes fabricated with various process conditions. Thin film transistors (TFTs) with the corresponding process conditions were also fabricated to correlate the electronic properties with the TFT performances. It was clearly shown that trap(More)
Microwave photoconductivity decay (μ-PCD) method was applied to evaluate the effects of chemical composition and Ar plasma induced damage on the bulk and the surface states in amorphous In-Ga-ZnO (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong(More)