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—As technology continues to scale down, NAND Flash memory has been increasingly relying on error-correction codes (ECCs) to ensure the overall data storage integrity. Although advanced ECCs such as low-density parity-check (LDPC) codes can provide significantly stronger error-correction capability over BCH codes being used in current practice, their(More)
Conventional error correction codes (ECCs), such as the commonly used BCH code, have become increasingly inadequate for solid state drives (SSDs) as the capacity of NAND flash memory continues to increase and its reliability continues to degrade. It is highly desirable to deploy a much more powerful ECC, such as low-density parity-check (LDPC) code, to(More)
Recently a novel algorithm transformation was proposed to reduce the critical path of Berlekamp-Massey algorithm implementation for errors-alone Reed-Solomon decoding. In this paper, we apply the same methodology to transform the Berlekamp-Massey algorithm for errors-and-erasures RS decoding. We present a regular hardware architecture to implement the(More)
Handbook of Signal Processing Systems provides a standalone, complete reference to signal processing systems organized in four parts. The first part motivates representative applications that drive and apply state‐of‐ the art methods for design and implementation of signal processing systems; the second part discusses architectures for implementing these(More)
This paper advocates a device-aware design strategy to improve various NAND flash memory system performance metrics. It is well known that NAND flash memory program/erase (PE) cycling gradually degrades memory device raw storage reliability, and sufficiently strong error correction codes (ECC) must be used to ensure the PE cycling endurance. Hence, memory(More)
—Signal detector is a key element in a multiple-input multiple-output (MIMO) wireless communication receiver. It has been well demonstrated that nonlinear tree search MIMO detectors can achieve near-optimum detection performance, nevertheless their efficient high-speed VLSI implementations are not trivial. For example, the hardware design of hard-or(More)
By storing multiple bits in each memory cell, multi-level per cell (MLC) NAND flash memories have been increasingly dominant in the flash memory market due to their obvious storage density advantage. However, MLC NAND flash memories are much more subject to storage reliability degradation as the technology continues to scale down. This paper presents an(More)
Due to its great scalability potential, phase change memory has become a topic of great current interest. However, high write energy consumption appears to be one of the biggest challenges to be tackled before phase change memory can be adopted as a mainstream memory technology. This paper presents architecture level technique to reduce phase change memory(More)
—Because of its promising scalability potential and support of multilevel per cell storage, phase-change memory has become a topic of great current interest. However, recent studies show that structural relaxation effect makes the resistance of phase-change material drift over the time, which can severely degrade multilevel per cell phase-change memory(More)