Tong-Chern Ong

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The U.S. Pharmacopeia (USP) general monograph provides a standard for dissolution compliance with the requirements as stated in the individual USP monograph for a tablet or capsule dosage form. The acceptance rules recommended by USP have important roles in the quality control process. The USP rules and their modifications are often used as an industrial(More)
The gate voltage-induced current crowding (GVICC) effect [1] had been found as the root cause of that high voltage tolerant I/O (HVT I/O) failed at low-voltage ESD event. Based on this finding, a new pre-driver design is proposed to pull down the voltages of top gate and bottom gate of the cascode NMOS to 0V during ESD zapping event for eliminating the(More)
In this paper, a new latch-up phenomenon, in which the positive trigger voltage V/sub trg+/ is smaller than the theoretical value, based on the two-step activation diode model, is found and analyzed by TCAD simulation. Based on the simulation result, an analytical model for the positive trigger point is developed and methodologies for evaluating the(More)
In this paper, we present a new erase gate disturb mechanism during programming of selected cell for split-gate Flash memory. This type of disturb occurs on the programmed cell sharing the same erase gate as the selected cell. The disturb is due to electron-loss from floating gate to erase gate caused by low-field Fowler-Norheim (F-N) tunneling. We proposed(More)
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