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Reticle error correction for lithography tool qualification benefits and limitations
The objective of Reticle Error Correction (REC) is to determine the exposure tool fingerprint in the Across Chip Linewidth Variation (ACLV). Extensive reticle and wafer measurements indicate hiddenExpand
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Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension
We report here on initial results for the characterization and modeling of 100 nm lithography features based on normal incidence spectroscopic ellipsometry and polarized reflectometry. In this work,Expand
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Total test repeatability: a new figure of merit for CD metrology tools
Evaluations of CD-metrology tools usually focus on resolution, repeatability and accuracy. These are traditional metrics which relate to the capability to measure a local line width. These metrics doExpand
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Application of optical CD for characterization of 70nm dense lines
CD and line shape control face tougher technology requirements as the drive towards feature size reduction continues down to the 70nm regime. This poses new challenges not only for the lithographyExpand
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Scatterometry based 65nm node CDU analysis and prediction using novel reticle measurement technique
Scatterometry was selected as CD metrology for the 65nm CDU system qualification. Because of the dominant reticle residuals component in the 65nm CD budget for dense lines, significant improvementsExpand
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Reticle processing induced proximity effects
Minimising Across Retical Line width Variation is a continuous challenge for each resolution node. Having tight critical dimension (CD) uniformity for a large variety of pitches is even moreExpand
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