Tomonori Sekiguchi

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Three DRAM technologies, which are a leakage- and soft-error-free planar-capacitor SOI cell, a data-line shielded twin (2-T) cell array, and an offset-free dynamic-<i>V<sub>T</sub></i> sense amplifier suitable for low-voltage mid-point sensing, are presented and evaluated. New noise-generation mechanisms are also shown. Using the experimental data of an(More)
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