Tomonori Nishimura

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The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate(More)
The "collective length" in VO2 metal-insulator transitions is identified by controlling nanoscale dopant distribution in thin films. The crossover from the local transition to the collective transition is observed, which originates from the increased instability of the metal-insulator domain boundary. This instability renders the transition collective(More)
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